Datasheet > BL10N65

BL10N65

更新时间： 2024-11-06 17:01:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	305K
描述
10A, 650V, 40W, N Channel, Power MOSFETs

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BL10N65 数据手册

Product Specification

N-Channel Enhancement Mode Field Effect Transistor

BL10N65

FEATURES



Extremely High dv/dt Capability.

100% AvalancheTtested.

Gate Charge Minimized.

Very Good Manufacturing Reliabilty.

APPLICATIONS



N-channel Enhancement mode Effect Transistor.



Switching Applications.

TO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

BL10N65

TO-220AB

50pcs / Tube

10N65

MAXIMUM RATING operating temperature range applies unless otherwise specified

Value

Symbol

Parameter

Unit

V_DSS

Drain-Source Voltage

Gate -Source Voltage

650

±30

V_GSS

Maximum Drain Current(continuous) at

T_C=25℃

T_C=100℃

I_D

6.3

Drain Current(pulsed)Note1

I_DM

P_D

Power Dissipation at T_C=25℃

G-S ESD (HBM C=100pF,R=1.5kΩ)

V_ESD(G-S)

4000

Single Pulse Avalanche Energy

(starting T_j=25℃,I_D=I_AR,V_DD=50V)

E_AS

500

Peak Diode Recovery Voltage Slope(Note2)

Thermal Resistance,Junction-to-Ambient

dv/dt

R_θJA

4.5

62.5

V/ns

℃/W

℃

Operating Junction and StorageTem-perature Range

T_jT_stg

-55 to +150

Note: 1. Pulse width limited by safe operating area

2. I_SO≤12A,di/dt≤400A/us,V_Peak<V_(BR)DSS

MTM0248A

www.gmesemi.com

12 3 4

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