Datasheet > BL10N60A

BL10N60A

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
13页	538K
描述
BL10N60A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL10N60A 数据手册

BL10N60A

Power MOSFET

1．Description

BL10N60A, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. The transistor is suitable device

for SMPS, high speed switching and general

purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS@Tj.max

I_D

Value

650

Unit

R_DS(ON).Typ

FEATURES

0.62

Ω



Fast Switching

Low Crss

100% avalanche tested

Improved dv/dt capability

RoHS product

APPLICATIONS



High frequency switching mode power supply

Electronic ballast



ORDERING INFORMATION

Ordering Codes

BL10N60A-P

BL10N60A-A

Package

TO-220

TO-220F

Product Code

BL10N60A

Packing

Tube

BL10N60A-A

XXXX Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW Year&Week

ZZ Assembly Code

SSSSS Lot Code

(1)BL10N60A:600V 10A

(2) A:TO-220F P:TO-220

BL10N60A

Rev 1.0

9/2019

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

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