Datasheet > BL10N40D

BL10N40D

更新时间： 2024-09-25 17:01:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	453K
描述
10A, 400V, N Channel,Power MOSFETs

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中文翻译

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数据手册

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BL10N40D 数据手册

N-Channel Enhancement Mode MOSFET

BL10N40D

Features



Fast switching

ESD improved capability

Low gate charge

Low reverse transfer capacitances

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

100% △V_DSTested!

TO-252

100% UIS Tested!

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

10N40D

BL10N40D

80 pcs / Tube or 2500 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

400

±30

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current ^*1

I_D

I_DM

Single Pulse Avalanche Energy ^*2

E_AS

113

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

R_θJC

T_J

100

°C /W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Operating Junction Temperature Range

Storage Temperature Range

1.25

-55 ~ +150

T_STG

°C

MTM0378A: May 2023 [2.1]

www.gmesemi.com

12 3 4 5

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