Datasheet > BL10N30F

BL10N30F

更新时间： 2024-11-23 17:00:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
3页	240K
描述
10A, 300V, 135W, N Channel, Power MOSFETs

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BL10N30F 数据手册

Product specification

N-Channel Power MOSFET

BL10N30F

FEATURES

High switching speed.

Lead-free

RDS(ON)=0.65Ω @ VGS=10V.

100% avalanche tested.

Very Good Manufacturing Reliabilty.

APPLICATIONS

N-Channel Power MOSFET.

Switching Applications.

ITO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

BL10N30F□

ITO-220AB

50/Tube

10N30F

□: none is for Lead Free package;

“G” is for Halogen Free package.

MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

Value

Symbol

Parameter

Unit

V_DS

Drain-Source Voltage

Gate -Source Voltage

300

±30

V_GS

I_D

Drain Current Continuous at T_C=25℃

Drain Current(pulsed)Note1

I_DM

P_D

Power Dissipation at T_C=25℃

115

Avalanche Energy(Single Pulsed (Note 2))

Avalanche Energy (Repetitive(Note 3))

E_AS

E_AR

360

13.5

135

Power Dissipation

TC=25℃

P_D

Derate above 25°C

1.07

62.5

0.93

-55 to +150

W/℃

℃/W

℃

Thermal Resistance,Junction-to-Ambient

Thermal Resistance,Junction-to-Case

Junction and StorageTemperature Range

R_θJA

R_θJC

T_jT_stg

Note:1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. L= 5.7mH, IAS = 10.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤10.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

MTM5023A

www.gmesemi.com

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