Datasheet > BGA7H1N6E6327XTSA1

BGA7H1N6E6327XTSA1

更新时间： 2024-11-22 01:22:07

品牌	Logo	应用领域
英飞凌 - INFINEON		LTE
页数	文件大小	规格书
2页	220K
描述
Infineonâs New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates

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Product Brief

Inﬁneon’s New LTE Low Noise Ampliﬁers

Almost Double Smartphone Data Rates

Improving the user experience by improving smartphone data rates by up to 96% is

the boast of Inﬁneon for its LTE LNA (low noise ampliﬁers) and quad LNA banks.

The BGA7x1N6 and BGM7xxxx4L12 families provide a low noise ﬁgure, the exact gain

and high linearity needed to help smartphone designers overcome the challenges

of LTE or 4G which allows for data rates up to 300Mbit/s – compared to 56Mbit/s in

the latest UMTS (3G) release. However, the increasing complexity of the RF front end

results in more RF components (e.g. switches, diplexers and dividers) and leads to

increasing losses over the whole system and deterioration of the signal-to-noise ratio

(SNR). The distance between antenna and the RF transceiver leads to additional line

losses that also negatively aﬀect SNR and therefore the data rate.

Key Features

High linearity

Best-in-class noise ﬁgure

Low current consumption

Supply voltage: 1.5V to 3.3V

Ultra small

– Single LNAs:

TSNP-6-2 leadless package

(footprint: 1.1 x 0.7mm²)

– Quad LNA banks:

The LNAs and LNA banks are based on the company’s Silicon Germanium Carbon

(SiGe:C) chip technology and include built-in ESD protection of 2kV HBM.

TSLP-12-4 leadless package

(footprint: 1.1 x 1.9mm²)

B7HF Silicon Germanium Carbon

They are located in the diversity and main antenna path of the phone and push smart-

phone data rates’ limits 96% higher than in solutions without LNAs. High linearity

assures optimal signal reception even in conditions of poorly isolated antenna and

long line losses between antenna and transceiver. The typical sensitivity improvement

of 3.4dB compared to systems without LNAs is achieved in devices with a package size

70% smaller (1.1 x 0.7mm²) than previously available LNAs and 61% smaller

(1.9 x 1.1mm²) than previously available LNA banks.

(SiGe:C) technology

RF output internally matched

to 50Ω

Low external component count

2kV HBM ESD protection

Pb-free (RoHS compliant) package

The products are also self-shielded to prevent parasitic interference and require only

one external component per LNA.

Applications

There are three LTE LNAs and seven quad LNA bank families to address the required

band conﬁgurations for diﬀerent world regions, each letter in the series denotes a

diﬀerent frequency band: L for the low, 0.7GHz to 1GHz band; M for mid, 1.7GHz to

2.2GHz band; and H for high, 2.3GHz to 2.7GHz band.

Smartphones

Tablets

Datacards

M2M communication

They are shipped in RoHS-compliant TSNP-6-2 or TSLP 12-4 plastic packages.

www.inﬁneon.com/rfmmic

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与BGA7H1N6E6327XTSA1相关器件

型号	品牌	获取价格	描述	数据表
BGA7L1BN6	INFINEON	获取价格	BGA7L1BN6 是用于 LTE 的前端低噪声放大器，覆盖 716 Mhz 至 960
BGA7L1N6	INFINEON	获取价格	Infineonâs New LTE Low Noise Amplifiers Alm
BGA7L1N6E6327XTSA1	INFINEON	获取价格	Infineonâs New LTE Low Noise Amplifiers Alm
BGA7M1N6	INFINEON	获取价格	Infineonâs New LTE Low Noise Amplifiers Alm
BGA7M1N6E6327	INFINEON	获取价格	Material Content Data Sheet
BGA7M1N6E6327_15	INFINEON	获取价格	Material Content Data Sheet
BGA7M1N6E6327XTSA1	INFINEON	获取价格	Infineonâs New LTE Low Noise Amplifiers Alm
BGA824N6	INFINEON	获取价格	BGA824N6 是先进的低噪声放大器，适用于全球导航卫星系统 (GNSS)，适用频率为
BGA855N6	INFINEON	获取价格	GPS / GLONASS / COMPASS LNA
BGA8U1BN6	INFINEON	获取价格	BGA8U1BN6 是用于 LTE 的前端低噪声放大器，覆盖 4.0 Ghz 至 6.0

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