Datasheet > BGA9H1BN6

BGA9H1BN6

更新时间： 2024-11-06 14:56:07

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BGA9H1BN6 数据手册

BGA9H1BN6

Highband High Performance LNA with Power-Save-Mode

Features

• Operating frequencies: 2.3 to 2.7 GHz

• Insertion power gain: 20.3 dB

• Insertion loss in bypass mode: 4.3 dB

• Low noise figure: 0.6 dB

• Low current consumption: Min. 2.2 mA

• Multi-state control to save power

0.7x1.1mm²

Potential Applications

The BGA9H1BN6 is designed for 4G and 5G applications covering 3GPP bands between 2.3 and 2.7 GHz (optimized

for band n41). As a result of a high gain and an ultra-low noise figure performance of the LNA the system sensi-

tivity is significantly improved compared to conventional LNAs. The GPIO interface provides a straightforward

control over multiple operation modes. Next to the high gain mode and bypass mode, a power-save and a high

performance mode can be selected to increase system dynamic. Due to the low-power mode with 2.2 mA cur-

rent consumption and 1.2V operation voltage the overall power consumption is extremely low. The BGA9H1BN6 is

suitable to be implemented in small battery powered devices like wearables or smartphones.

Product Validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Block diagram

CTRL1

CTRL2

VCC

ESD

GND

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

Revision 2.0

2021-10-14

12 3 4 5 6 7...12

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