Datasheet > BGA8U1BN6

BGA8U1BN6

更新时间： 2024-11-26 11:14:27

品牌	Logo	应用领域
英飞凌 - INFINEON		放大器 LTE
页数	文件大小	规格书
12页	484K
描述
BGA8U1BN6 是用于 LTE 的前端低噪声放大器，覆盖 4.0 Ghz 至 6.0 Ghz 的宽频率范围。在应用配置中，LNA 在 4.5mA 的电流消耗下提供 13.7 dB 增益和 1.6 dB 噪声系数。在旁路模式下，LNA 提供 -7.5 dB 的插入损耗。

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BGA8U1BN6 数据手册

BGA8U1BN6

Low Noise Amplifier for Ultra High Band 4-6GHz (f.e. LTE - U/ LAA

with bypass)

Features

•

Operating frequencies: 4.0 - 6.0 GHz

Insertion power gain: 13.7 dB

Insertion Loss in bypass mode: 7.5 dB

Low noise figure: 1.6 dB

Low current consumption: 4.5 mA

Multi-state control: OFF-, bypass- and high gain-Mode

Ultra small TSNP-6-2 leadless package

0.7 x 1.1 mm²

RF input and RF output internally matched to 50 Ohm, no external

components necessary

Application

The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function

increases the overall system dynamic range and leads to more flexibility in the RF front-end.

In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to

the basestation the bypass mode can be activated reducing current consumption.

The BGA8U1BN6 is designed for the inlicensed LTE spectrum (4-6GHz) part of the 3GPP Release 13.

Product Validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Block diagram

VCC

GPIO1 GPIO2

ESD

GND

BGA8U1BN6_Blockdiagram.vsd

Data Sheet

www.infineon.com

Revision 3.2

2021-04-19

12 3 4 5 6 7...12

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