Datasheet > BGA8V1BN6

BGA8V1BN6

更新时间： 2024-11-26 11:15:07

品牌	Logo	应用领域
英飞凌 - INFINEON		放大器 LTE
页数	文件大小	规格书
11页	303K
描述
BGA8V1BN6 是用于 LTE 的前端低噪声放大器，覆盖 3.3 Ghz 至 3.8 Ghz 的宽频率范围。在应用配置中，LNA 在 4.2mA 的电流消耗下提供 15.0 dB 增益和 1.2 dB 噪声系数。在旁路模式下，LNA 提供 -5.3 dB 的插入损耗。 BGA8V1BN6 基于英飞凌科技 B9HF 硅锗技术。它采用 1.6 V 至 3.1 V 电源供电。该设备具有多状态控制(关闭，旁路和高增益模式)。

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BGA8V1BN6 数据手册

BGA8V1BN6

Low Noise Amplifier for LTE Band 42 and Band 43

Features

•

Operating frequencies: 3.3 - 3.8 GHz

Insertion power gain: 15.0 dB

Insertion Loss in bypass mode: 5.3 dB

Low noise figure: 1.2 dB

Low current consumption: 4.2 mA

Multi-state control: OFF-, bypass- and high gain-Mode

Ultra small TSNP-6-2 leadless package

RF input and RF output internally matched to 50 Ohm

No external components necessary

0.7 x 1.1 mm²

Application

The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function

increases the overall system dynamic range and leads to more flexibility in the RF front-end.

In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to

the basestation the bypass mode can be activated reducing current consumption.

Product Validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Block diagram

VCC

GPIO1 GPIO2

ESD

GND

BGA8V1BN6_Blockdiagram.vsd

Data Sheet

www.infineon.com

Revision 3.3 (min/max)

2017-09-14

12 3 4 5 6 7...11

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