品牌 | Logo | 应用领域 |
英飞凌 - INFINEON | LTE | |
页数 | 文件大小 | 规格书 |
18页 | 805K | |
描述 | ||
The BGA9V1MN9 is a low noise amplifier for LTE and 5G which covers a wide frequency range from 3.3 GHz to 4.2 GHz. The LNA provides up to 21.0 dB gain and 0.75 dB noise figure at a current consumption of 5.8 mA in the application configuration described in Chapter 7. With the Gain Step feature the gain and linearity can be adjusted to increase the system dynamic range and to accommodate to changing interference scenarios. |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BGAU1A10 | INFINEON |
获取价格 |
LTE / 3G LNAs | |
BGAV1A10 | INFINEON |
获取价格 |
LTE / 3G LNAs | |
BGAV1A10E6327XTSA1 | INFINEON |
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Telecom Circuit, | |
BGB100 | NXP |
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0 dBm TrueBlue radio module | |
BGB101 | NXP |
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0 dBm Bluetooth radio module | |
BGB110 | NXP |
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Bluetooth radio module | |
BGB201 | NXP |
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Bluetooth System-in-a-Package radio with baseband controller | |
BGB203 | NXP |
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Bluetooth System-in-a-Package radio with baseband controller | |
BGB420 | INFINEON |
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Active Biased Transistor | |
BGB540 | INFINEON |
获取价格 |
Active Biased RF Transistor |