Datasheet > BGAV1A10

BGAV1A10

更新时间： 2024-11-06 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		LTE
页数	文件大小	规格书
18页	475K
描述
LTE / 3G LNAs

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BGAV1A10 数据手册

BGAV1A10

Low Noise Amplifier with Gain Control

Features

• Operating frequencies: 3.4 - 3.8 GHz

• Insertion power gain: 18.0 dB

• Gain dynamic range: 22 dB

• Low noise figure: 1.3 dB

• Low current consumption: 5.0 mA

• Multi-state control: Gain- and Bypass-Modes

• Small ATSLP leadless package

1.1x1.5mm²

Application

The LTE data rate can be significantly improved by using the high gain LNA. The integrated gain control and

bypass function increases the overall system dynamic range and leads to more flexibility in the front-end. In

highgainmodetheBGAV1A10oꢀersbestNoiseFiguretoensurehighdataratesevenontheLTEcelledge. Closer

tothebasestationthebypassmodecanbeactivatedreducingcurrentconsumption. ThankstotheMIPIcontrol

interface, control lines are reduced to a minimum.

Product Validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Block diagram

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Data Sheet

www.infineon.com

Revision 3.0

2018-04-23

12 3 4 5 6 7...18

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