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BFR183T PDF预览

BFR183T

更新时间: 2024-11-10 22:40:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
7页 83K
描述
NPN Silicon RF Transistor

BFR183T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-75包装说明:SC-75, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.63
其他特性:LOW NOISE最大集电极电流 (IC):0.065 A
基于收集器的最大容量:0.57 pF集电极-发射极最大电压:12 V
配置:SINGLE最小直流电流增益 (hFE):50
最高频带:L BANDJESD-30 代码:R-PDSO-G3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):8000 MHzBase Number Matches:1

BFR183T 数据手册

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BFR183T  
NPN Silicon RF Transistor  
Preliminary data  
3
For low-noise, high-gain broadband amplifiers at  
collector currents from 2 mA to 30 mA  
f = 8 GHz  
T
F = 1.2 dB at 900 MHz  
2
1
VPS05996  
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking  
Pin Configuration  
Package  
BFR183T  
RHs  
1 = B  
2 = E  
3 = C  
SC75  
Maximum Ratings  
Parameter  
Symbol  
Value  
12  
Unit  
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
V
CEO  
CES  
CBO  
EBO  
20  
20  
2
I
65  
mA  
mW  
°C  
C
Base current  
I
5
B
P
250  
Total power dissipation  
tot  
1)  
T
S
83°C  
Junction temperature  
Ambient temperature  
Storage temperature  
T
j
150  
T
T
-65 ... 150  
-65 ... 150  
A
stg  
Thermal Resistance  
2)  
R
K/W  
Junction - soldering point  
270  
thJS  
1
T is measured on the collector lead at the soldering point to the pcb  
S
2
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
1
Aug-22-2001  

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