BFR183TF

更新时间： 2024-11-11 06:42:03

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
4页	73K
描述
Silicon NPN Planar RF Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BFR183TF 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.06
Is Samacsys：	N	最大集电极电流 (IC)：	0.065 A
配置：	Single	最小直流电流增益 (hFE)：	50
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.2 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

BFR183TF 数据手册

BFR183TF

Vishay Semiconductors

VISHAY

Silicon NPN Planar RF Transistor

Description

The main purpose of this bipolar transistor is broad-

band amplification up to 2 GHz. In the space-saving

3-pin surface-mount SOT490 package electrical per-

formance and reliability are taken to a new level cov-

ering a smaller footprint on PC boards than previous

packages. In addition to space savings, the SOT490

provides a higher level of reliability than other 3-pin

packages, such as more resistance to moisture. Due

to the short length of its leads the SOT490 is also re-

ducing package inductances resulting in some better

electrical performance. All of these aspects make this

device an ideal choice for demanding RF applica-

tions.

16867

Electrostatic sensitive device.

Observe precautions for handling.

Features

Mechanical Data

Typ: BFR183TF

Case: Plastic case (SOT 490)

Weight: 2.5 mg

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

• Small feedback capacitance

• Low noise figure

• High power gain

Applications

For low noise and high gain broadband amplifiers at

collector currents from 2 mA to 30 mA.

Parts Table

Part

Marking

Package

SOT490

BFR183TF

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

V_CBO

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_CEO

V_EBO

I_C

°C

Base current

I_B

200

Total power dissipation

Junction temperature

Storage temperature range

T_amb≤ 60 °C

P_tot

T_j

150

T_stg

- 65 to + 150

°C

Maximum Thermal Resistance

Parameter

Test condition

Symbol

R_thJA

Value

450

Unit

K/W

Junction ambient

¹⁾on glass fibre printed board (25 x 20 x 1.5) mm³plated with 35 µm Cu

Document Number 85102

Rev. 2, 23-Sep-02

www.vishay.com

12 3 4

中文翻译

下载PDF

与BFR183TF相关器件

型号	品牌	获取价格	描述	数据表
BFR183T-GS08	TEMIC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN,
BFR183T-GS18	TEMIC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC
BFR183TW	VISHAY	获取价格	Silicon NPN Planar RF Transistor
BFR183W	INFINEON	获取价格	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector curr
BFR183W_07	INFINEON	获取价格	NPN Silicon RF Transistor
BFR183WE6327	INFINEON	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
BFR183WE6327	ROCHESTER	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
BFR183W-E6433	INFINEON	获取价格	Transistor
BFR18-4P1	ITT	获取价格	Circular Connector Adapter, 4 Contact(s), Male-Male
BFR18-4S1	ITT	获取价格	Circular Connector Adapter, 4 Contact(s), Female-Female

与BFR183TF相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

BFR183TF

BFR183TF 技术参数

BFR183TF 数据手册

与BFR183TF相关器件

与BFR183TF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BFR183TF

BFR183TF 技术参数

BFR183TF 数据手册

与BFR183TF相关器件

与BFR183TF相关文章

您还可以找

您在本页遇到什么问题？