BFR193E6327XT

更新时间： 2024-11-11 13:05:59

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
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6页	514K
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中文翻译

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数据手册

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BFR193E6327XT 数据手册

BFR193

NPN Bipolar RF Transistor

• For low noise, high-gain amplifiers up to 2 GHz

• For linear broadband amplifiers

• f = 8 GHz, NF

= 1 dB at 900 MHz

min

• Pb-free (RoHS compliant) package

• Qualification report according to AEC-Q101 available

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFR193

Marking

RCs

Pin Configuration

2 = E 3 = C

Package

SOT23

1 = B

Maximum Ratings at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

580

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

Total power dissipation

tot

T ≤ 69°C

150

-55 ... 150

Junction temperature

Storage temperature

Stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

140

Unit

K/W

thJS

T is measured on the collector lead at the soldering point to the pcb

For calculation of R

please refer to Application Note AN077 (Thermal Resistance Calculation)

thJA

2012-08-09

12 3 4 5 6

中文翻译

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