BFR193TW

更新时间： 2024-02-14 11:54:26

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
4页	72K
描述
Silicon NPN Planar RF Transistor

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数据手册

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BFR193TW 数据手册

BFR193T/BFR193TW

Vishay Telefunken

Silicon NPN Planar RF Transistor

Electrostatic sensitive device.

Observe precautions for handling.

Applications

For low–noise, high–gain applications such as power

amplifiers up to 2GHz and for linear broadband

amplifiers.

Features

Low noise figure

High transition frequency f = 8 GHz

Excellent large-signal behaviour

13 652

13 570

13 581

94 9280

BFR193T Marking: RC

Plastic case (SOT 23)

BFR193TW Marking: WRC

Plastic case (SOT 323)

1 = Collector, 2 = Base, 3 = Emitter

Absolute Maximum Ratings

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature range

CBO

CEO

EBO

≤ 45 C

tot

420

150

–65 to +150

amb

stg

Maximum Thermal Resistance

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

thJA

Value

250

Unit

K/W

Junction ambient mounted on glass fibre printed board

(25 x 20 x 1.5) mm plated with 35 m Cu

Document Number

Rev. 2, 14-Feb-00

www.vishay.de • FaxBack +1-408-970-5600

1 (4)

12 3 4

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