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BFR194 PDF预览

BFR194

更新时间: 2024-11-10 22:40:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体放大器小信号双极晶体管射频小信号双极晶体管电信光电二极管
页数 文件大小 规格书
7页 61K
描述
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)

BFR194 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SOT-23, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.78
Is Samacsys:N最大集电极电流 (IC):0.1 A
基于收集器的最大容量:2 pF集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):20
最高频带:L BANDJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.7 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):5000 MHz
Base Number Matches:1

BFR194 数据手册

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BFR 194  
PNP Silicon RF Transistor  
• For low distortion broadband amplifiers in  
antenna and telecommunications systems up  
to 1.5 GHz at collector currents from 20mA  
to 80mA  
• Complementary type: BFR 106 (NPN)  
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking Ordering Code  
Pin Configuration  
Package  
BFR 194  
RKs  
Q62702-F1346  
1 = B  
2 = E  
3 = C  
SOT-23  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
15  
20  
3
V
CEO  
CBO  
EBO  
I
I
100  
10  
mA  
mW  
°C  
C
Base current  
B
Total power dissipation  
P
tot  
T
73 °C  
700  
S
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
150  
j
- 65 ... + 150  
- 65 ... + 150  
A
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
110  
K/W  
thJS  
1) T is measured on the collector lead at the soldering point to the pcb.  
S
Semiconductor Group  
1
Dec-13-1996  

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