BFR193W

更新时间： 2024-01-04 20:06:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体放大器晶体管
页数	文件大小	规格书
7页	61K
描述
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

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数据手册
替代型号

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BFR193W 数据手册

BFR 193W

NPN Silicon RF Transistor

• For low noise, high-gain amplifiers up to 2GHz

• For linear broadband amplifiers

• f = 8GHz

F = 1.3dB at 900MHz

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

Package

BFR 193W RCs

Q62702-F1510

1 = B

2 = E

3 = C

SOT-323

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

Total power dissipation

tot

≤

63 °C

580

Junction temperature

Ambient temperature

Storage temperature

150

- 65 ... + 150

stg

Thermal Resistance

≤

Junction - soldering point

thJS

150

K/W

1) T is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group

Dec-11-1996

12 3 4 5 6 7

中文翻译

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BFR193W 替代型号

型号	品牌	替代类型	描述	数据表
BFP405	INFINEON	功能相似	NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz)
BFP183	INFINEON	功能相似	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector curr

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