Datasheet > BFR193L3_07

BFR193L3_07

更新时间： 2024-11-11 12:20:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	51K
描述
NPN Silicon RF Transistor

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中文翻译

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数据手册

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BFR193L3_07 数据手册

BFR193L3

NPN Silicon RF Transistor*

• For low noise, high-gain amplifiers up to 2 GHz

• For linear broadband amplifiers

• f = 8 GHz, F = 1 dB at 900 MHz

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFR193L3

TSLP-3-1

1 = B

2 = E

3 = C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

580

Total power dissipation

tot

T ≤ 95°C

150

Junction temperature

Ambient temperature

Storage temperature

-55 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

tbd

K/W

Junction - soldering point

thJS

¹Pb-containing package may be available upon special request

²T is measured on the collector lead at the soldering point to the pcb

³For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-03-30

12 3 4 5 6

中文翻译

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