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BFR183W_07 PDF预览

BFR183W_07

更新时间: 2024-11-11 12:50:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
7页 140K
描述
NPN Silicon RF Transistor

BFR183W_07 数据手册

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BFR183W  
NPN Silicon RF Transistor*  
For low noise, high-gain broadband amplifiers at  
collector currents from 2 mA to 30 mA  
3
2
1
f = 8 GHz, F = 0.9 dB at 900 MHz  
T
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
* Short term description  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BFR183W  
Marking  
RHs  
Pin Configuration  
Package  
SOT323  
1=B  
2=E  
3=C  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
12  
20  
20  
2
65  
5
V
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CES  
CBO  
EBO  
mA  
mW  
°C  
I
I
C
Base current  
Total power dissipation  
B
2)  
450  
P
tot  
T 56 °C  
S
150  
-65 ... 150  
-65 ... 150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
j
A
stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
210  
Unit  
K/W  
3)  
R
thJS  
1Pb-containing package may be available upon special request  
2T is measured on the collector lead at the soldering point to the pcb  
S
3For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2007-03-30  
1

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