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BFR183WE6327 PDF预览

BFR183WE6327

更新时间: 2024-11-11 15:45:27
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器光电二极管晶体管
页数 文件大小 规格书
6页 661K
描述
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

BFR183WE6327 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.24
最大集电极电流 (IC):0.065 A基于收集器的最大容量:0.7 pF
集电极-发射极最大电压:12 V配置:SINGLE
最小直流电流增益 (hFE):50最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.45 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):8000 MHz
Base Number Matches:1

BFR183WE6327 数据手册

 浏览型号BFR183WE6327的Datasheet PDF文件第2页浏览型号BFR183WE6327的Datasheet PDF文件第3页浏览型号BFR183WE6327的Datasheet PDF文件第4页浏览型号BFR183WE6327的Datasheet PDF文件第5页浏览型号BFR183WE6327的Datasheet PDF文件第6页 
BFR183W  
Low Noise Silicon Bipolar RF Transistor  
For low noise, high-gain broadband amplifiers at  
collector currents from 2 mA to 30 mA  
3
2
1
f = 8 GHz, NF  
= 0.9 dB at 900 MHz  
min  
T
Pb-free (RoHS compliant) and halogen-free package  
with visible leads  
Qualification report according to AEC-Q101 available  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BFR183W  
Marking  
RHs  
Pin Configuration  
2=E 3=C  
Package  
SOT323  
1=B  
Maximum Ratings at T = 25 °C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
Unit  
12  
20  
20  
2
65  
5
V
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CES  
CBO  
EBO  
mA  
mW  
°C  
I
C
Base current  
Total power dissipation  
I
B
1)  
450  
P
tot  
T 56 °C  
S
150  
-55 ... 150  
Junction temperature  
Storage temperature  
T
J
T
Stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
210  
Unit  
K/W  
2)  
R
thJS  
1
T is measured on the collector lead at the soldering point to the pcb  
S
2
For the definition of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJS  
2014-04-03  
1

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