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BDW63B

更新时间： 2024-10-31 22:14:39
品牌 Logo 应用领域
POINN /
页数 文件大小 规格书
6页 147K
描述
NPN SILICON POWER DARLINGTONS

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BDW63B 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.7
外壳连接：COLLECTOR最大集电极电流 (IC)：6 A
集电极-发射极最大电压：80 V配置：DARLINGTON
最小直流电流增益 (hFE)：100JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

BDW63B 数据手册

 浏览型号BDW63B的Datasheet PDF文件第2页浏览型号BDW63B的Datasheet PDF文件第3页浏览型号BDW63B的Datasheet PDF文件第4页浏览型号BDW63B的Datasheet PDF文件第5页浏览型号BDW63B的Datasheet PDF文件第6页 
BDW63, BDW63A, BDW63B, BDW63C, BDW63D  
NPN SILICON POWER DARLINGTONS  
Copyright © 1997 Power Innovations Limited, UK  
AUGUST 1978 - REVISED MARCH 1997  
●
Designed for Complementary Use with  
BDW64, BDW64A, BDW64B, BDW64C and  
BDW64D  
TO-220 PACKAGE  
(TOP VIEW)  
●
●
●
60 W at 25°C Case Temperature  
6 A Continuous Collector Current  
1
2
3
B
C
E
Minimum h of 750 at 3 V, 2 A  
FE  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BDW63  
45  
BDW63A  
BDW63B  
BDW63C  
BDW63D  
BDW63  
60  
Collector-base voltage (IE = 0)  
VCBO  
80  
V
100  
120  
45  
BDW63A  
BDW63B  
BDW63C  
BDW63D  
60  
Collector-emitter voltage (IB = 0) (see Note 1)  
VCEO  
80  
V
100  
120  
Emitter-base voltage  
VEB  
IC  
5
V
A
Continuous collector current  
6
Continuous base current  
IB  
0.1  
60  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Operating junction temperature range  
Ptot  
Ptot  
W
W
mJ  
°C  
°C  
°C  
2
2
½LIC  
50  
Tj  
Tstg  
TA  
-65 to +150  
-65 to +150  
-65 to +150  
Operating temperature range  
Operating free-air temperature range  
NOTES: 1. These values apply when the base-emitter diode is open circuited.  
2. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 W,  
VBE(off) = 0, RS = 0.1 W, VCC = 20 V.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
123456

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与BDW63B相关器件

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BDW63B-S BOURNS

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 		Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BDW63C BOURNS

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 		NPN SILICON POWER DARLINGTONS
BDW63C POINN

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BDW63C ISC

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BDW63C-S BOURNS

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 		暂无描述
BDW63D ISC

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 		Silicon NPN Darlington Power Transistor
BDW63D POINN

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 		NPN SILICON POWER DARLINGTONS
BDW63D BOURNS

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 		NPN SILICON POWER DARLINGTONS
BDW63D-S BOURNS

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 		Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDW63-S BOURNS

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 		Power Bipolar Transistor, 6A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti

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