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BDW63C PDF预览

BDW63C

更新时间: 2024-11-01 03:21:39
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
5页 114K
描述
NPN SILICON POWER DARLINGTONS

BDW63C 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.78
外壳连接:COLLECTOR最大集电极电流 (IC):6 A
集电极-发射极最大电压:100 V配置:DARLINGTON
最小直流电流增益 (hFE):100JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BDW63C 数据手册

 浏览型号BDW63C的Datasheet PDF文件第2页浏览型号BDW63C的Datasheet PDF文件第3页浏览型号BDW63C的Datasheet PDF文件第4页浏览型号BDW63C的Datasheet PDF文件第5页 
BDW63, BDW63A, BDW63B, BDW63C, BDW63D  
NPN SILICON POWER DARLINGTONS  
Designed for Complementary Use with  
BDW64, BDW64A, BDW64B, BDW64C and  
BDW64D  
TO-220 PACKAGE  
(TOP VIEW)  
60 W at 25°C Case Temperature  
6 A Continuous Collector Current  
1
2
3
B
C
E
Minimum h of 750 at 3V, 2 A  
FE  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BDW63  
45  
BDW63A  
BDW63B  
BDW63C  
BDW63D  
BDW63  
60  
Collector-base voltage (IE = 0)  
VCBO  
80  
V
100  
120  
45  
BDW63A  
BDW63B  
BDW63C  
BDW63D  
60  
Collector-emitter voltage (IB = 0) (see Note 1)  
VCEO  
80  
V
100  
120  
Emitter-base voltage  
VEB  
IC  
5
V
A
Continuous collector current  
6
Continuous base current  
IB  
0.1  
60  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Operating junction temperature range  
Ptot  
Ptot  
W
W
mJ  
°C  
°C  
°C  
2
2
½LIC  
50  
Tj  
Tstg  
TA  
-65 to +150  
-65 to +150  
-65 to +150  
Operating temperature range  
Operating free-air temperature range  
NOTES: 1. These values apply when the base-emitter diode is open circuited.  
2. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 ,  
BE(off) = 0, RS = 0.1 , VCC = 20 V.  
V
AUGUST 1978 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

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