BDW64D

更新时间： 2024-11-02 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	238K
描述
Silicon PNP Darlington Power Transistor

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技术参数
数据手册

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BDW64D 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

BDW64D 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BDW64/A/B/C/D

DESCRIPTION

·Collector Current -I_C= -6A

·High DC Current Gain-h_FE= 750(Min.)@ I_C= -2A

·Complement to Type BDW63/A/B/C/D

APPLICATIONS

·Designed for audio output stages and general amplifier

and switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDW64

-45

BDW64A

BDW64B

BDW64C

BDW64D

BDW64

-60

-80

Collector-Base

Voltage

V_CBO

-100

-120

-45

BDW64A

BDW64B

BDW64C

BDW64D

-60

Collector-Emitter

Voltage

V_CEO

-80

-100

-120

-5

V_EBO

I_C

Emitter-Base Voltage

Collector Current-Continuous

Base Current-Continuous

-6

I_B

-0.1

Collector Power Dissipation

@ T_a=25℃

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

Junction Temperature

150

-65~150

℃

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

2.08

62.5

UNIT

℃/W

Thermal Resistance, Junction to Case

R_{th j-c}

Rth j-c

isc Website：www.iscsemi.cn

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BDW73B	ISC	获取价格	Silicon NPN Darlington Power Transistor
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