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BDW63D PDF预览

BDW63D

更新时间: 2024-11-01 06:41:59
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 240K
描述
Silicon NPN Darlington Power Transistor

BDW63D 数据手册

 浏览型号BDW63D的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
BDW63/A/B/C/D  
DESCRIPTION  
·Collector Current -IC= 6A  
·High DC Current Gain-hFE= 750(Min.)@ IC= 2A  
·Complement to Type BDW64/A/B/C/D  
APPLICATIONS  
·Designed for audio output stages and general amplifier  
and switching applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
BDW63  
45  
BDW63A  
BDW63B  
BDW63C  
BDW63D  
BDW63  
60  
80  
Collector-Base  
Voltage  
VCBO  
V
100  
120  
45  
BDW63A  
BDW63B  
BDW63C  
BDW63D  
60  
Collector-Emitter  
Voltage  
VCEO  
V
80  
100  
120  
5
VEBO  
IC  
Emitter-Base Voltage  
V
A
A
Collector Current-Continuous  
Base Current-Continuous  
6
IB  
0.1  
2
Collector Power Dissipation  
@ Ta=25℃  
Collector Power Dissipation  
@ TC=25℃  
PC  
W
60  
TJ  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
2.08  
62.5  
UNIT  
/W  
/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Case  
Rth j-c  
Rth j-c  
isc Websitewww.iscsemi.cn  

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