Datasheet > BDW64B

BDW64B

更新时间： 2024-11-01 22:39:31

品牌	Logo	应用领域
POINN		/
页数	文件大小	规格书
6页	150K
描述
PNP SILICON POWER DARLINGTONS

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BDW64B 数据手册

BDW64, BDW64A, BDW64B, BDW64C, BDW64D

PNP SILICON POWER DARLINGTONS

AUGUST 1978 - REVISED MARCH 1997

●

Designed for Complementary Use with

BDW63, BDW63A, BDW63B, BDW63C and

BDW63D

TO-220 PACKAGE

(TOP VIEW)

●

60 W at 25°C Case Temperature

6 A Continuous Collector Current

Minimum h of 750 at 3 V, 2 A

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BDW64

-45

BDW64A

BDW64B

BDW64C

BDW64D

BDW64

-60

Collector-base voltage (I_E= 0)

V_CBO

-80

-100

-120

-45

BDW64A

BDW64B

BDW64C

BDW64D

-60

Collector-emitter voltage (I_B= 0) (see Note 1)

V_CEO

-80

-100

-120

Emitter-base voltage

V_EBO

I_C

-5

Continuous collector current

-6

Continuous base current

I_B

-0.1

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

Operating junction temperature range

P_tot

°C

½LI_C

T_j

T_stg

T_A

-65 to +150

Operating temperature range

Operating free-air temperature range

NOTES: 1. These values apply when the base-emitter diode is open circuited.

2. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= -5 mA, R_BE= 100 W,

V_BE(off)= 0, R_S= 0.1 W, V_CC= -20 V.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

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