BDW64B

更新时间： 2024-11-02 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	238K
描述
Silicon PNP Darlington Power Transistor

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技术参数
数据手册

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BDW64B 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

BDW64B 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BDW64/A/B/C/D

DESCRIPTION

·Collector Current -I_C= -6A

·High DC Current Gain-h_FE= 750(Min.)@ I_C= -2A

·Complement to Type BDW63/A/B/C/D

APPLICATIONS

·Designed for audio output stages and general amplifier

and switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDW64

-45

BDW64A

BDW64B

BDW64C

BDW64D

BDW64

-60

-80

Collector-Base

Voltage

V_CBO

-100

-120

-45

BDW64A

BDW64B

BDW64C

BDW64D

-60

Collector-Emitter

Voltage

V_CEO

-80

-100

-120

-5

V_EBO

I_C

Emitter-Base Voltage

Collector Current-Continuous

Base Current-Continuous

-6

I_B

-0.1

Collector Power Dissipation

@ T_a=25℃

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

Junction Temperature

150

-65~150

℃

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

2.08

62.5

UNIT

℃/W

Thermal Resistance, Junction to Case

R_{th j-c}

Rth j-c

isc Website：www.iscsemi.cn

中文翻译

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与BDW64B相关器件

型号	品牌	获取价格	描述	数据表
BDW64B-S	BOURNS	获取价格	Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
BDW64C	ISC	获取价格	Silicon PNP Darlington Power Transistor
BDW64C	POINN	获取价格	PNP SILICON POWER DARLINGTONS
BDW64C	BOURNS	获取价格	PNP SILICON POWER DARLINGTONS
BDW64D	BOURNS	获取价格	PNP SILICON POWER DARLINGTONS
BDW64D	POINN	获取价格	PNP SILICON POWER DARLINGTONS
BDW64D	ISC	获取价格	Silicon PNP Darlington Power Transistor
BDW64D-S	BOURNS	获取价格	Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BDW64-S	BOURNS	获取价格	Power Bipolar Transistor, 6A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
BDW73	ISC	获取价格	Silicon NPN Darlington Power Transistor