BDW63D

更新时间： 2025-08-17 03:21:39

品牌	Logo	应用领域
伯恩斯 - BOURNS		/
页数	文件大小	规格书
5页	114K
描述
NPN SILICON POWER DARLINGTONS

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数据手册

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BDW63D 数据手册

BDW63, BDW63A, BDW63B, BDW63C, BDW63D

NPN SILICON POWER DARLINGTONS

●

Designed for Complementary Use with

BDW64, BDW64A, BDW64B, BDW64C and

BDW64D

TO-220 PACKAGE

(TOP VIEW)

●

60 W at 25°C Case Temperature

6 A Continuous Collector Current

Minimum h of 750 at 3V, 2 A

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BDW63

BDW63A

BDW63B

BDW63C

BDW63D

BDW63

Collector-base voltage (I_E= 0)

V_CBO

100

120

BDW63A

BDW63B

BDW63C

BDW63D

Collector-emitter voltage (I_B= 0) (see Note 1)

V_CEO

100

120

Emitter-base voltage

V_EB

I_C

Continuous collector current

Continuous base current

I_B

0.1

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

Operating junction temperature range

P_tot

°C

½LI_C

T_j

T_stg

T_A

-65 to +150

Operating temperature range

Operating free-air temperature range

NOTES: 1. These values apply when the base-emitter diode is open circuited.

2. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 5 mA, R_BE= 100 Ω,

_BE(off)= 0, R_S= 0.1 Ω, V_CC= 20 V.

AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4 5

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