BDW63, BDW63A, BDW63B, BDW63C, BDW63D
NPN SILICON POWER DARLINGTONS
Copyright © 1997 Power Innovations Limited, UK
AUGUST 1978 - REVISED MARCH 1997
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Designed for Complementary Use with
BDW64, BDW64A, BDW64B, BDW64C and
BDW64D
TO-220 PACKAGE
(TOP VIEW)
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60 W at 25°C Case Temperature
6 A Continuous Collector Current
1
2
3
B
C
E
Minimum h of 750 at 3 V, 2 A
FE
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
BDW63
45
BDW63A
BDW63B
BDW63C
BDW63D
BDW63
60
Collector-base voltage (IE = 0)
VCBO
80
V
100
120
45
BDW63A
BDW63B
BDW63C
BDW63D
60
Collector-emitter voltage (IB = 0) (see Note 1)
VCEO
80
V
100
120
Emitter-base voltage
VEB
IC
5
V
A
Continuous collector current
6
Continuous base current
IB
0.1
60
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Ptot
Ptot
W
W
mJ
°C
°C
°C
2
2
½LIC
50
Tj
Tstg
TA
-65 to +150
-65 to +150
-65 to +150
Operating temperature range
Operating free-air temperature range
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 W,
VBE(off) = 0, RS = 0.1 W, VCC = 20 V.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1