Datasheet > BDW56

BDW56

更新时间： 2024-09-14 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	115K
描述
isc Silicon PNP Power Transistors

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BDW56 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

BDW56/58/60

DESCRIPTION

·Collector–Emitter Sustaining Voltage-

: V_CEO(SUS)= -45V- BDW56

= -60V- BDW58

= -80V- BDW60

·Complement to Type BDW55/57/59

APPLICATIONS

·Designed for use in professional equipment such as

telecommunication and etc.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

-45

UNIT

BDW56

BDW58

BDW60

BDW56

BDW58

BDW60

BDW56

BDW58

BDW60

Collector-Base

V_CBO

-60

Voltage

-100

-45

Collector-Emitter

Voltage R_BE= 1kΩ

V_CER

-60

-100

-45

Collector-Emitter

Voltage

V_CEO

-60

-80

V_EBO

I_C

Emitter-Base Voltage

-5

Collector Current-Continuous

Collector Current-Peak

-1

I_CM

-1.5

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

Junction Temperature

175

℃

Storage Temperature Range

-65~175

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

℃/W

R_{th j-c}

100

R_{th j-a}

isc Website：www.iscsemi.cn

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