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BDW58 PDF预览

BDW58

更新时间: 2024-11-01 06:41:59
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 115K
描述
isc Silicon PNP Power Transistors

BDW58 数据手册

 浏览型号BDW58的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistors  
BDW56/58/60  
DESCRIPTION  
·Collector–Emitter Sustaining Voltage-  
: VCEO(SUS)= -45V- BDW56  
= -60V- BDW58  
= -80V- BDW60  
·Complement to Type BDW55/57/59  
APPLICATIONS  
·Designed for use in professional equipment such as  
telecommunication and etc.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
-45  
UNIT  
BDW56  
BDW58  
BDW60  
BDW56  
BDW58  
BDW60  
BDW56  
BDW58  
BDW60  
Collector-Base  
VCBO  
V
-60  
Voltage  
-100  
-45  
Collector-Emitter  
Voltage RBE= 1kΩ  
VCER  
V
V
-60  
-100  
-45  
Collector-Emitter  
Voltage  
VCEO  
-60  
-80  
VEBO  
IC  
Emitter-Base Voltage  
-5  
V
A
A
Collector Current-Continuous  
Collector Current-Peak  
-1  
ICM  
-1.5  
Collector Power Dissipation  
@ TC=25℃  
PC  
TJ  
8
W
Junction Temperature  
175  
Storage Temperature Range  
-65~175  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX UNIT  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
10  
/W  
/W  
Rth j-c  
100  
Rth j-a  
isc Websitewww.iscsemi.cn  

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