5秒后页面跳转
BDW54D PDF预览

BDW54D

更新时间: 2024-11-01 03:21:39
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管开关局域网
页数 文件大小 规格书
5页 121K
描述
PNP SILICON POWER DARLINGTONS

BDW54D 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.78
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:120 V配置:DARLINGTON
最小直流电流增益 (hFE):100JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BDW54D 数据手册

 浏览型号BDW54D的Datasheet PDF文件第2页浏览型号BDW54D的Datasheet PDF文件第3页浏览型号BDW54D的Datasheet PDF文件第4页浏览型号BDW54D的Datasheet PDF文件第5页 
BDW54, BDW54A, BDW54B, BDW54C, BDW54D  
PNP SILICON POWER DARLINGTONS  
Designed for Complementary Use with  
BDW53, BDW53A, BDW53B, BDW53C and  
BDW53D  
TO-220 PACKAGE  
(TOP VIEW)  
40 W at 25°C Case Temperature  
4 A Continuous Collector Current  
1
2
3
B
C
E
Minimum h of 750 at 3V, 1.5 A  
FE  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BDW54  
-45  
BDW54A  
BDW54B  
BDW54C  
BDW54D  
BDW54  
-60  
Collector-base voltage (IE = 0)  
VCBO  
-80  
V
-100  
-120  
-45  
BDW54A  
BDW54B  
BDW54C  
BDW54D  
-60  
Collector-emitter voltage (IB = 0) (see Note 1)  
VCEO  
-80  
V
-100  
-120  
Emitter-base voltage  
VEBO  
IC  
-5  
V
A
Continuous collector current  
-4  
Continuous base current  
IB  
-50  
40  
mA  
W
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Operating junction temperature range  
Ptot  
Ptot  
2
W
2
½LIC  
25  
mJ  
°C  
°C  
°C  
Tj  
Tstg  
TA  
-65 to +150  
-65 to +150  
-65 to +150  
Operating temperature range  
Operating free-air temperature range  
NOTES: 1. These values apply when the base-emitter diode is open circuited.  
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 ,  
BE(off) = 0, RS = 0.1 , VCC = -20 V.  
V
AUGUST 1978 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

与BDW54D相关器件

型号 品牌 获取价格 描述 数据表
BDW54-S BOURNS

获取价格

Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
BDW55 ISC

获取价格

isc Silicon NPN Power Transistors
BDW56 ISC

获取价格

isc Silicon PNP Power Transistors
BDW57 ISC

获取价格

isc Silicon NPN Power Transistors
BDW58 ISC

获取价格

isc Silicon PNP Power Transistors
BDW59 ISC

获取价格

isc Silicon NPN Power Transistors
BDW60 ISC

获取价格

isc Silicon PNP Power Transistors
BDW61D FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon
BDW61DD87Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon
BDW61DL99Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon