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BDW55 PDF预览

BDW55

更新时间: 2024-11-01 06:41:59
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 115K
描述
isc Silicon NPN Power Transistors

BDW55 数据手册

 浏览型号BDW55的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
BDW55/57/59  
DESCRIPTION  
·Collector–Emitter Sustaining Voltage-  
: VCEO(SUS)= 45V- BDW55  
= 60V- BDW57  
= 80V- BDW59  
·Complement to Type BDW56/58/60  
APPLICATIONS  
·Designed for use in professional equipment such as  
telecommunication and etc.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
45  
UNIT  
BDW55  
BDW57  
BDW59  
BDW55  
BDW57  
BDW59  
BDW55  
BDW57  
BDW59  
Collector-Base  
VCBO  
V
60  
Voltage  
100  
45  
Collector-Emitter  
Voltage RBE= 1kΩ  
VCER  
V
V
60  
100  
45  
Collector-Emitter  
Voltage  
VCEO  
60  
80  
VEBO  
IC  
Emitter-Base Voltage  
5
V
A
A
Collector Current-Continuous  
Collector Current-Peak  
1
ICM  
1.5  
Collector Power Dissipation  
@ TC=25℃  
PC  
TJ  
8
W
Junction Temperature  
175  
Storage Temperature Range  
-65~175  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX UNIT  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
10  
/W  
/W  
Rth j-c  
100  
Rth j-a  
isc Websitewww.iscsemi.cn  

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