Datasheet > BDW55

BDW55

更新时间： 2024-11-01 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	115K
描述
isc Silicon NPN Power Transistors

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BDW55 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BDW55/57/59

DESCRIPTION

·Collector–Emitter Sustaining Voltage-

: V_CEO(SUS)= 45V- BDW55

= 60V- BDW57

= 80V- BDW59

·Complement to Type BDW56/58/60

APPLICATIONS

·Designed for use in professional equipment such as

telecommunication and etc.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDW55

BDW57

BDW59

BDW55

BDW57

BDW59

BDW55

BDW57

BDW59

Collector-Base

V_CBO

Voltage

100

Collector-Emitter

Voltage R_BE= 1kΩ

V_CER

100

Collector-Emitter

Voltage

V_CEO

V_EBO

I_C

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

I_CM

1.5

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

Junction Temperature

175

℃

Storage Temperature Range

-65~175

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

℃/W

R_{th j-c}

100

R_{th j-a}

isc Website：www.iscsemi.cn

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