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BDW54C-S PDF预览

BDW54C-S

更新时间: 2024-11-01 13:05:55
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
5页 121K
描述
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3

BDW54C-S 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.38
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):4 A集电极-发射极最大电压:100 V
配置:DARLINGTON最小直流电流增益 (hFE):100
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BDW54C-S 数据手册

 浏览型号BDW54C-S的Datasheet PDF文件第2页浏览型号BDW54C-S的Datasheet PDF文件第3页浏览型号BDW54C-S的Datasheet PDF文件第4页浏览型号BDW54C-S的Datasheet PDF文件第5页 
BDW54, BDW54A, BDW54B, BDW54C, BDW54D  
PNP SILICON POWER DARLINGTONS  
Designed for Complementary Use with  
BDW53, BDW53A, BDW53B, BDW53C and  
BDW53D  
TO-220 PACKAGE  
(TOP VIEW)  
40 W at 25°C Case Temperature  
4 A Continuous Collector Current  
1
2
3
B
C
E
Minimum h of 750 at 3V, 1.5 A  
FE  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BDW54  
-45  
BDW54A  
BDW54B  
BDW54C  
BDW54D  
BDW54  
-60  
Collector-base voltage (IE = 0)  
VCBO  
-80  
V
-100  
-120  
-45  
BDW54A  
BDW54B  
BDW54C  
BDW54D  
-60  
Collector-emitter voltage (IB = 0) (see Note 1)  
VCEO  
-80  
V
-100  
-120  
Emitter-base voltage  
VEBO  
IC  
-5  
V
A
Continuous collector current  
-4  
Continuous base current  
IB  
-50  
40  
mA  
W
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Operating junction temperature range  
Ptot  
Ptot  
2
W
2
½LIC  
25  
mJ  
°C  
°C  
°C  
Tj  
Tstg  
TA  
-65 to +150  
-65 to +150  
-65 to +150  
Operating temperature range  
Operating free-air temperature range  
NOTES: 1. These values apply when the base-emitter diode is open circuited.  
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 ,  
BE(off) = 0, RS = 0.1 , VCC = -20 V.  
V
AUGUST 1978 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

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