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BD682T PDF预览

BD682T

更新时间: 2024-11-03 04:09:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
12页 383K
描述
Plastic Medium−Power Silicon PNP Darlingtons

BD682T 数据手册

 浏览型号BD682T的Datasheet PDF文件第2页浏览型号BD682T的Datasheet PDF文件第3页浏览型号BD682T的Datasheet PDF文件第4页浏览型号BD682T的Datasheet PDF文件第5页浏览型号BD682T的Datasheet PDF文件第6页浏览型号BD682T的Datasheet PDF文件第7页 
BD6xxx  
Complementary power Darlington transistors  
.
Features  
Good h linearity  
FE  
High f frequency  
T
Monolithic Darlington configuration with  
integrated antiparallel collector-emitter diode  
1
Applications  
2
3
Linear and switching industrial equipment  
SOT-32  
Description  
The devices are manufactured in planar base  
island technology with monolithic Darlington  
configuration.  
Figure 1.  
Internal schematic diagram  
R1 typ.= 15 K  
R2 typ.= 100 Ω  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
BD677  
BD677A  
BD678  
BD678A  
BD679  
BD679A  
BD680  
BD680A  
BD681  
BD682  
BD677  
BD677A  
BD678  
BD678A  
BD679  
BD679A  
BD680  
BD680A  
BD681  
BD682  
SOT-32  
Tube  
January 2008  
Rev 5  
1/12  
www.st.com  
12  

BD682T 替代型号

型号 品牌 替代类型 描述 数据表
BD682S ONSEMI

类似代替

4.0 A, 100 V PNP Darlington Bipolar Power Transistor
BD682STU ONSEMI

类似代替

4.0 A, 100 V PNP Darlington Bipolar Power Transistor, 1920-TUBE
BD682 STMICROELECTRONICS

功能相似

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