BD683PBFREE

更新时间： 2024-11-03 13:05:55

品牌	Logo	应用领域
CENTRAL		晶体晶体管功率双极晶体管达林顿晶体管放大器局域网
页数	文件大小	规格书
2页	332K
描述
Power Bipolar Transistor,

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中文翻译

获取价格

技术参数
数据手册

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BD683PBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.67
JESD-609代码：	e3	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

BD683PBFREE 数据手册

BD675 SERIES

www.centralsemi.com

NPN SILICON

POWER DARLINGTON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BD675 Series

types are NPN Silicon Darlington Power Transistors,

available in the plastic TO-126 package, and are

designed for audio and video output applications.

MARKING: FULL PART NUMBER

TO-126 CASE

BD675

BD677

BD679

MAXIMUM RATINGS: (T =25°C) SYMBOL BD675A BD677A BD679A BD681

BD683

120

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

100

CBO

CEO

EBO

120

5.0

4.0

100

Continuous Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage

Junction Temperature

T , T

-65 to +150

3.13

°C

stg

Thermal Resistance

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=Rated V

200

µA

CBO

CEO

EBO

CBO

=Rated V

, T =100°C

2.0

500

2.0

µA

CBO

=½Rated V

=5.0V

CEO

I =50mA (BD675, BD675A)

CEO

I =50mA (BD677, BD677A)

I =50mA (BD679, BD679A)

CEO

I =50mA (BD681)

100

120

CEO

I =50mA (BD683)

CEO

I =1.5A, I =30mA (Non-A)

2.5

2.8

2.5

CE(SAT)

BE(ON)

I =2.0A, I =40mA (A)

=3.0V, I =1.5A (Non-A)

=3.0V, I =2.0A (A)

=3.0V, I =1.5A (Non-A)

750

1.0

=3.0V, I =2.0A (A)

=3.0V, I =1.5A, f=1.0MHz

R1 (14-June 2010)

中文翻译

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