Datasheet > BD684A

BD684A

更新时间： 2024-11-03 12:51:11

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	72K
描述
SILICON DARLINGTON POWER TRANSISTORS

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数据手册

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BD684A 数据手册

PNP BD684 – BD684A

SILICON DARLINGTON POWER TRANSISTORS

The BD684 and BD684A are PNP eptaxial-base transistors in monolithic Darlington circuit for

audio and video applications.

They are mounted in Jedec TO-126 plastic package.

NPN complements are BD683 and BD683A.

Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

V_CEO

V_CBO

V_EBO

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

-120

-5

I_C

I_CM

-4

-6

I_C

Collector Current

I_BM

P_T

T_J

Base current peak value

Total power Dissipation

Junction Temperature

Storage Temperature

-0.1

150

@ T_mb= 25°C

°C

T_Stg

-65 to +150

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction to mouting base

Thermal Resistance, Junction to ambient in free air

R_thJ-mb

R_thJ-a

3.12

100

K/W

23/10/2012

COMSET SEMICONDUCTORS

1 | 3

12 3

中文翻译

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