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BD682TG PDF预览

BD682TG

更新时间: 2024-11-03 04:09:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
12页 383K
描述
Plastic Medium−Power Silicon PNP Darlingtons

BD682TG 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:TO-225AA包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.14
最大集电极电流 (IC):4 A集电极-发射极最大电压:100 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):750
JEDEC-95代码:TO-225AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

BD682TG 数据手册

 浏览型号BD682TG的Datasheet PDF文件第2页浏览型号BD682TG的Datasheet PDF文件第3页浏览型号BD682TG的Datasheet PDF文件第4页浏览型号BD682TG的Datasheet PDF文件第5页浏览型号BD682TG的Datasheet PDF文件第6页浏览型号BD682TG的Datasheet PDF文件第7页 
BD6xxx  
Complementary power Darlington transistors  
.
Features  
Good h linearity  
FE  
High f frequency  
T
Monolithic Darlington configuration with  
integrated antiparallel collector-emitter diode  
1
Applications  
2
3
Linear and switching industrial equipment  
SOT-32  
Description  
The devices are manufactured in planar base  
island technology with monolithic Darlington  
configuration.  
Figure 1.  
Internal schematic diagram  
R1 typ.= 15 K  
R2 typ.= 100 Ω  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
BD677  
BD677A  
BD678  
BD678A  
BD679  
BD679A  
BD680  
BD680A  
BD681  
BD682  
BD677  
BD677A  
BD678  
BD678A  
BD679  
BD679A  
BD680  
BD680A  
BD681  
BD682  
SOT-32  
Tube  
January 2008  
Rev 5  
1/12  
www.st.com  
12  

BD682TG 替代型号

型号 品牌 替代类型 描述 数据表
BD682G ONSEMI

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Plastic Medium−Power Silicon PNP Darlingtons

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