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BD683 PDF预览

BD683

更新时间: 2024-11-03 06:41:55
品牌 Logo 应用领域
COMSET 晶体晶体管放大器局域网
页数 文件大小 规格书
3页 193K
描述
SILICON DARLINGTON POWER TRANSISTORS

BD683 数据手册

 浏览型号BD683的Datasheet PDF文件第2页浏览型号BD683的Datasheet PDF文件第3页 
NPN BD683  
PNP BD684  
SILICON DARLINGTON POWER  
TRANSISTORS  
The BD683 is NPN eptaxial-base transistors in monolithic Darlington circuit for audio  
and video applications.  
They are mounted in Jedec TO-126 plastic package.  
PNP complement is BD684.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
VCEO  
120  
VCBO  
VEBO  
140  
5
4
IC  
Collector Current  
IC  
A
6
0.1  
ICM  
Base current (peak value)  
Total power Dissipation  
Junction Temperature  
Storage Temperature  
IB  
IBM  
A
Watts  
°C  
@ Tmb = 25°C  
PT  
TJ  
40  
150  
TStg  
-65 to +150  
°C  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
3.12  
100  
Unit  
K/W  
K/W  
Thermal Resistance, Junction to mouting base  
RthJ-mb  
RthJ-a  
Thermal Resistance, Junction to ambient in free air  
COMSET SEMICONDUCTORS  
1/3  

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