Datasheet > BD684TO3_12

BD684TO3_12

更新时间： 2024-09-24 12:53:11

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	77K
描述
SILICON DARLINGTON POWER TRANSISTORS

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中文翻译

获取价格

数据手册

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BD684TO3_12 数据手册

PNP BD684 TO3 (Temporary part number)

SILICON DARLINGTON POWER TRANSISTORS

PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video

applications.

They are mounted in Jedec TO-3 metal package.

Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

V_CEO

V_CBO

V_EBO

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

-140

-5

I_C

I_CM

-4

-6

I_C

Collector Current

I_BM

P_T

T_J

Base current (peak value)

Total power Dissipation

Junction Temperature

Storage Temperature

-0.1

150

@ T_mb= 25°C

W-

°C

T_Stg

-65 to +150

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction to mouting base

Thermal Resistance, Junction to ambient in free air

R_thJ-mb

R_thJ-a

3.12

100

K/W

Temporary datasheet

23/10/2012

COMSET SEMICONDUCTORS

1 | 3

12 3

中文翻译

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