Datasheet > BD684TO3

BD684TO3

更新时间： 2024-11-03 08:51:43

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
2页	67K
描述
SILICON DARLINGTON POWER TRANSISTORS

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中文翻译

获取价格

数据手册

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BD684TO3 数据手册

PNP BD684 TO3 (Temporary part number)

SILICON DARLINGTON POWER

TRANSISTORS

PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video

applications.

They are mounted in Jedec TO-3 metal package.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

-V_CEO

-V_CBO

-V_EBO

140

0.1

150

-I_C

-I_CM

-I_BM

@ T_mb= 25°C

Collector Current

-I_C

Base current (peak value)

Total power Dissipation

Junction Temperature

Storage Temperature

-I_B

P_T

T_J

T_Stg

Watts

°C

-65 to +150

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction to mouting base

Thermal Resistance, Junction to ambient in free air

R_thJ-mb

R_thJ-a

3.12

100

K/W

Temporary data sheet

COMSET SEMICONDUCTORS

中文翻译

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