Datasheet > BD684

BD684

更新时间： 2024-09-24 06:41:55

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	193K
描述
SILICON DARLINGTON POWER TRANSISTORS

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中文翻译

获取价格

技术参数
数据手册

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BD684 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.83

BD684 数据手册

NPN BD683

PNP BD684

SILICON DARLINGTON POWER

TRANSISTORS

The BD683 is NPN eptaxial-base transistors in monolithic Darlington circuit for audio

and video applications.

They are mounted in Jedec TO-126 plastic package.

PNP complement is BD684.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

V_CEO

120

V_CBO

V_EBO

140

I_C

Collector Current

I_C

0.1

I_CM

Base current (peak value)

Total power Dissipation

Junction Temperature

Storage Temperature

I_B

I_BM

Watts

°C

@ T_mb= 25°C

P_T

T_J

150

T_Stg

-65 to +150

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

3.12

100

Unit

K/W

Thermal Resistance, Junction to mouting base

R_thJ-mb

R_thJ-a

Thermal Resistance, Junction to ambient in free air

COMSET SEMICONDUCTORS

1/3

12 3

中文翻译

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