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BD683 PDF预览

BD683

更新时间: 2024-11-03 08:51:43
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管放大器局域网
页数 文件大小 规格书
3页 40K
描述
Silicon NPN Power Transistors

BD683 数据手册

 浏览型号BD683的Datasheet PDF文件第2页浏览型号BD683的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BD683  
DESCRIPTION  
·
·With TO-126 package  
·Complement to type BD684  
·DARLINGTON  
APPLICATIONS  
·For audio and video applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter -base voltage  
CONDITIONS  
VALUE  
140  
120  
5
UNIT  
Open emitter  
Open base  
V
V
V
VCEO  
VEBO  
Open collector  
IC  
ICM  
IBM  
PT  
Tj  
Collector current (DC)  
Collector current-Peak  
Base current-Peak  
4
6
A
A
0.1  
A
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
40  
W
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-mb  
Thermal resistance, junction to mouting base  
3.12  
K/W  

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