BD682S

更新时间： 2024-11-04 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管功率双极晶体管
页数	文件大小	规格书
4页	59K
描述
4.0 A, 100 V PNP Darlington Bipolar Power Transistor

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中文翻译

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数据手册
替代型号

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BD682S 数据手册

BD676, BD676A, BD678,

BD678A, BD680, BD680A,

BD682, BD682T

Plastic Medium−Power

Silicon PNP Darlingtons

http://onsemi.com

This series of plastic, medium−power silicon PNP Darlington

transistors can be used as output devices in complementary

general−purpose amplifier applications.

4.0 AMP DARLINGTON

POWER TRANSISTORS

PNP SILICON

Features

• High DC Current Gain −

45, 60, 80, 100 VOLT, 40 WATT

= 750 (Min) @ I = 1.5 and 2.0 Adc

• Monolithic Construction

• BD676, 676A, 678, 678A, 680, 680A, 682 are complementary

with BD675, 675A, 677, 677A, 679, 679A, 681

• BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703

• Pb−Free Package are Available*

TO−225AA

CASE 77

STYLE 1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

Vdc

CEO

BD676, BD676A

BD678, BD678A

BD680, BD680A

BD682

MARKING DIAGRAMS

100

Collector-Base Voltage

Vdc

BD676, BD676A

BD678, BD678A

BD680, BD680A

BD682

YWW

BD6xxG

100

Emitter-Base Voltage

Collector Current

Base Current

5.0

4.0

0.1

Vdc

Adc

BD6xx = Device Code

xx = 76, 76A, 78, 78A,

80, 80A, 82, or 82T

Total Device Dissipation

= Year

@ T = 25°C

0.32

W/°C

= Work Week

= Pb−Free Package

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Case

3.13

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

October, 2005 − Rev. 12

BD676/D

12 3 4

中文翻译

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BD682S 替代型号

型号	品牌	替代类型	描述	数据表
BD682T	ONSEMI	类似代替	Plastic Medium−Power Silicon PNP Darlingtons

与BD682S相关器件

型号	品牌	获取价格	描述	数据表
BD682STU	FAIRCHILD	获取价格	PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD),
BD682STU	ONSEMI	获取价格	4.0 A, 100 V PNP Darlington Bipolar Power Transistor, 1920-TUBE
BD682T	ONSEMI	获取价格	Plastic Medium−Power Silicon PNP Darlingtons
BD682TG	ONSEMI	获取价格	Plastic Medium−Power Silicon PNP Darlingtons
BD683	SAVANTIC	获取价格	Silicon NPN Power Transistors
BD683	ISC	获取价格	Silicon NPN Power Transistors
BD683	CENTRAL	获取价格	NPN SILICON POWER DARLINGTON TRANSISTOR
BD683	NJSEMI	获取价格	Trans Darlington NPN 120V 4A 3-Pin TO-126
BD683	TRSYS	获取价格	NPN PLASTIC POWER DARLINGTON TRANSISTORS
BD683	COMSET	获取价格	SILICON DARLINGTON POWER TRANSISTORS

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