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BD682A PDF预览

BD682A

更新时间: 2024-02-21 00:56:26
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
3页 76K
描述
SILICON DARLINGTON POWER TRANSISTORS

BD682A 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:TO-225AA包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.14
最大集电极电流 (IC):4 A集电极-发射极最大电压:100 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):750
JEDEC-95代码:TO-225AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

BD682A 数据手册

 浏览型号BD682A的Datasheet PDF文件第2页浏览型号BD682A的Datasheet PDF文件第3页 
PNP BD676/A - BD678/A - BD680/A - BD682/A  
SILICON DARLINGTON POWER TRANSISTORS  
The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126  
plastic package.  
They are eptaxial-base transistors in monolithic Darlington circuit for audio and video  
applications.  
NPN complements are BD675/A-BD677/A-BD679/A-BD681/A  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
-VCEO  
Ratings  
Value  
Unit  
BD676/A  
BD678/A  
BD680/A  
BD682/A  
BD676/A  
BD678/A  
BD680/A  
BD682/A  
45  
60  
80  
100  
45  
60  
80  
100  
Collector-Emitter Voltage  
Collector-Base Voltage  
V
-VCBO  
V
-VEBO  
-IC  
Emitter-Base Voltage  
Collector Current  
5
4
6
0.1  
40  
V
A
-IC  
-ICM  
-IBM  
-IB  
PT  
TJ  
TStg  
Base current (peak value)  
Total power Dissipation  
Junction Temperature  
Storage Temperature  
A
@ Tmb = 25°C  
W
°C  
°C  
150  
-65 to +150  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJ-mb  
RthJ-a  
Thermal Resistance, Junction to mouting base  
Thermal Resistance, Junction to ambient in free air  
3.12  
100  
K/W  
K/W  
COMSET SEMICONDUCTORS  
1

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