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BD679 PDF预览

BD679

更新时间: 2024-11-04 08:51:43
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 41K
描述
Silicon NPN Darligton Power Transistors

BD679 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.54
Base Number Matches:1

BD679 数据手册

 浏览型号BD679的Datasheet PDF文件第2页浏览型号BD679的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Darligton Power Transistors  
BD675/BD677/BD679  
DESCRIPTION  
·
·With TO-126 package  
·Complement to type BD676/678/680  
·DARLINGTON  
·High DC current gain  
APPLICATIONS  
·For use as output devices in  
complementary general–purpose  
amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings (Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
BD675  
BD677  
BD679  
BD675  
BD677  
BD679  
45  
60  
VCBO  
Collector-base voltage  
Open emitter  
Open base  
V
80  
45  
VCEO  
Collector-emitter voltage  
V
60  
80  
VEBO  
IC  
ICM  
IB  
Emitter -base voltage  
Collector current  
Open collector  
5
V
A
4
Collector current-Peak  
Base current  
7
A
0.1  
40  
A
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
W
150  
-55~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
100  
UNIT  
K/W  
K/W  
Rth j-a  
Thermal resistance from junction to ambient  
Rth j-mb  
Thermal resistance from junction to mounting base  
3.12  

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