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BD679A

更新时间: 2024-11-03 22:48:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
4页 115K
描述
DARLINGTON POWER TRANSISTORS NPN SILICON

BD679A 数据手册

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Order this document  
by BD675/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . for use as output devices in complementary general–purpose amplifier applica-  
tions.  
High DC Current Gain —  
= 750 (Min) @ I = 1.5 and 2.0 Adc  
Monolithic Construction  
BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A,  
678, 678A, 680, 680A, 682  
h
FE  
C
*Motorola Preferred Device  
BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803  
4.0 AMPERE  
DARLINGTON  
POWER TRANSISTORS  
NPN SILICON  
MAXIMUM RATINGS  
BD675  
BD677  
BD679  
BD675A BD677A BD679A  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
Symbol  
BD681  
100  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
60, 80, 100 VOLTS  
40 WATTS  
V
CEO  
45  
45  
60  
60  
80  
80  
V
100  
CB  
EB  
V
5.0  
4.0  
0.1  
I
C
Base Current  
I
B
Total Device Dissipation  
P
D
@T = 25 C  
40  
0.32  
Watts  
W/ C  
C
Derate above 25 C  
Operating and Storage Junction T , T  
stg  
55 to +150  
C
J
Temperating Range  
CASE 77–08  
TO–225AA TYPE  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
3.13  
C/W  
JC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5.0  
0
15  
30  
45  
60  
75  
90  
105 120 135 150  
C)  
165  
T
, CASE TEMPERATURE (  
°
C
Figure 1. Power Temperature Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
Motorola, Inc. 1995

BD679A 替代型号

型号 品牌 替代类型 描述 数据表
D44H8G ONSEMI

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