是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.59 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 63 | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
参考标准: | AEC-Q101; IEC-60134 | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 155 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP56T/R | NXP |
获取价格 |
TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpos | |
BCP56T1 | MOTOROLA |
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MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT | |
BCP56T1 | ONSEMI |
获取价格 |
NPN Silicon Epitaxial Transistor | |
BCP56T1/D | ETC |
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NPN Silicon Epitaxial Transistor | |
BCP56T1G | ONSEMI |
获取价格 |
NPN Silicon Epitaxial Transistor | |
BCP56T1SERIES | MOTOROLA |
获取价格 |
MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT | |
BCP56T3 | ONSEMI |
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NPN Silicon Epitaxial Transistor | |
BCP56T3G | ONSEMI |
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NPN Silicon Epitaxial Transistor | |
BCP56TA | DIODES |
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NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 | |
BCP56-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power |