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BCP56T

更新时间: 2024-11-06 02:56:59
品牌 Logo 应用领域
安世 - NEXPERIA 开关光电二极管晶体管
页数 文件大小 规格书
14页 275K
描述
80 V, 1 A NPN medium power transistors

BCP56T 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.59
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):63JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
参考标准:AEC-Q101; IEC-60134表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):155 MHz
Base Number Matches:1

BCP56T 数据手册

 浏览型号BCP56T的Datasheet PDF文件第2页浏览型号BCP56T的Datasheet PDF文件第3页浏览型号BCP56T的Datasheet PDF文件第4页浏览型号BCP56T的Datasheet PDF文件第5页浏览型号BCP56T的Datasheet PDF文件第6页浏览型号BCP56T的Datasheet PDF文件第7页 
BCP56T series  
80 V, 1 A NPN medium power transistors  
Rev. 2 — 29 April 2019  
Product data sheet  
1. Product profile  
1.1. General description  
NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device  
(SMD) plastic package.  
Table 1. Product overview  
Type number  
Package  
Nexperia  
SOT223  
NPN comlement  
JEDEC  
BCP56T  
SC-73  
BCP53T  
BCP56-10T  
BCP56-16T  
BCP53-10T  
BCP53-16T  
1.2. Features and benefits  
High collector current capability IC and ICM  
Three current gain selections  
High power dissipation capability  
AEC-Q101 qualified  
1.3. Applications  
Linear voltage regulators  
MOSFET drivers  
High-side switches  
Power management  
Amplifiers  
1.4. Quick reference data  
Table 2. Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol  
VCEO  
IC  
Parameter  
Conditions  
Min  
Typ  
Max  
80  
1
Unit  
V
collector-emitter voltage  
collector current  
open base  
-
-
-
-
-
-
A
ICM  
peak collector current  
single pulse; tp ≤ 1 ms  
2
A
 
 
 
 
 

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