生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.8 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 45 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 220 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.35 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC857BRTRPBFREE | CENTRAL |
获取价格 |
Transistor, | |
BC857BRTRTIN/LEAD | CENTRAL |
获取价格 |
Transistor | |
BC857BS | NXP |
获取价格 |
PNP general purpose double transistor | |
BC857BS | PANJIT |
获取价格 |
PNP GENERAL PURPOSE DUALTRANSISTORS | |
BC857BS | NEXPERIA |
获取价格 |
PNP general purpose double transistorProduction | |
BC857BS | DIODES |
获取价格 |
DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR | |
BC857BS | UTC |
获取价格 |
PNP | |
BC857BS | MCC |
获取价格 |
Tape: 3K/Reel , 120K/Ctn; | |
BC857BS | YANGJIE |
获取价格 |
SOT-363 | |
BC857BS | BL Galaxy Electrical |
获取价格 |
45V,0.2A,General Purpose PNP Bipolar Transistor |