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BC857BS-7 PDF预览

BC857BS-7

更新时间： 2024-02-09 22:47:48
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
3页 107K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-6

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BC857BS-7 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
Factory Lead Time：15 weeks风险等级：0.84
Samacsys Confidence：3Samacsys Status：Released
Samacsys PartID：440701Samacsys Pin Count：6
Samacsys Part Category：Undefined or MiscellaneousSamacsys Package Category：SOT23 (6-Pin)
Samacsys Footprint Name：SOT363_1Samacsys Released Date：2017-01-11 16:09:24
Is Samacsys：N最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：45 V配置：SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：220JESD-30 代码：R-PDSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
最高工作温度：125 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：0.2 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：100 MHzBase Number Matches：1

BC857BS-7 数据手册

 浏览型号BC857BS-7的Datasheet PDF文件第2页浏览型号BC857BS-7的Datasheet PDF文件第3页 
BC857BS  
DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR  
Features  
•
•
•
•
•
Ideally Suited for Automated Insertion  
SOT-363  
Min  
A
For Switching and AF Amplifier Applications  
Ultra-Small Surface Mount Package  
Lead Free/RoHS Compliant (Note 2)  
"Green" Device (Note 4 and 5)  
Dim  
A
B
C
D
F
Max  
0.30  
1.35  
2.20  
0.10  
C
B
1.15  
2.00  
Mechanical Data  
0.65 Nominal  
•
•
Case: SOT-363  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy  
42 leadframe).  
Terminal Connections: See Diagram  
Marking: K3W (See Page 3)  
Ordering Information (See Page 3)  
Weight: 0.006 grams  
H
0.30  
1.80  
⎯
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
K
J
M
H
J
•
•
•
L
D
K
L
0.90  
0.25  
0.10  
0°  
F
C2  
E1  
B1  
•
•
•
•
M
α
All Dimensions in mm  
B2  
C1  
E2  
TOP VIEW  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
ICM  
IBM  
Pd  
Value  
-50  
Unit  
V
-45  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Peak Collector Current  
Peak Base Current  
-5.0  
-100  
-200  
-200  
200  
V
(Note 1)  
(Note 1)  
(Note 1)  
(Note 1)  
mA  
mA  
mA  
mW  
Power Dissipation at TSB = 50°C  
Operating and Storage Temperature Range  
-55 to +125  
°C  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
hFE  
Min  
220  
—
Typ  
—
Max  
475  
625  
Unit  
—
Test Condition  
VCE = -5.0V, IC = -2.0mA  
DC Current Gain  
(Note 3)  
(Note 1)  
Thermal Resistance, Junction to Ambient Air  
—
°C/W Note 1  
Rθ  
JA  
IC = -10mA, IB = -0.5mA  
IC = -100mA, IB = -5.0mA  
IC = -10mA, IB = -0.5mA  
VCE = -5.0V, IC = -2.0mA  
VCB = -30V, IE = 0  
VCB = -30V, Tj = 150°C  
VEB = -5.0V, IC = 0  
VCE = -5.0V, IC = -10mA,  
f = 100MHz  
—
—
-100  
-400  
Collector-Emitter Saturation Voltage  
(Note 3)  
—
mV  
VCE(SAT)  
Base-Emitter Saturation Voltage  
Base-Emitter Voltage  
(Note 3)  
(Note 3)  
—
-580  
-700  
-665  
—
-750  
mV  
mV  
VBE(SAT)  
VBE  
ICBO  
ICBO  
IEBO  
—
—
-15  
-4.0  
nA  
µA  
Collector Cutoff Current  
Emitter Cutoff Current  
Gain Bandwidth Product  
—
—
—
-100  
nA  
100  
—
—
MHz  
fT  
Collector-Base Capacitance  
Emitter-Base Capacitance  
—
—
—
11  
3
—
pF  
pF  
CCBO  
CEBO  
VCB = -10V, f = 1.0MHz  
VEB = -0.5V, f = 1.0MHz  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Short duration pulse test used to minimize self-heating effect.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DS30373 Rev. 6 - 2  
1 of 3  
BC857BS  
© Diodes Incorporated  
www.diodes.com  
123

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