Datasheet > BC857BS_1

BC857BS_1

更新时间： 2024-11-29 08:49:55

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
3页	107K
描述
DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

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中文翻译

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BC857BS_1 数据手册

BC857BS

DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features

•

Ideally Suited for Automated Insertion

SOT-363

Min

For Switching and AF Amplifier Applications

Ultra-Small Surface Mount Package

Lead Free/RoHS Compliant (Note 2)

"Green" Device (Note 4 and 5)

Dim

Max

0.30

1.35

2.20

0.10

1.15

2.00

Mechanical Data

0.65 Nominal

•

Case: SOT-363

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

Terminal Connections: See Diagram

Marking: K3W (See Page 3)

Ordering Information (See Page 3)

Weight: 0.006 grams

0.30

1.80

⎯

0.40

2.20

0.10

1.00

0.40

0.25

8°

•

0.90

0.25

0.10

0°

C₂

E₁

B₁

•

All Dimensions in mm

B₂

C₁

E₂

TOP VIEW

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

I_CM

I_BM

P_d

Value

-50

Unit

-45

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Peak Collector Current

Peak Base Current

-5.0

-100

-200

200

(Note 1)

Power Dissipation at T_SB= 50°C

Operating and Storage Temperature Range

-55 to +125

°C

T_j, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Symbol

h_FE

Min

220

—

Typ

—

Max

475

625

Unit

—

Test Condition

V_CE= -5.0V, I_C= -2.0mA

DC Current Gain

(Note 3)

(Note 1)

Thermal Resistance, Junction to Ambient Air

—

°C/W Note 1

R_θ

I_C= -10mA, I_B= -0.5mA

I_C= -100mA, I_B= -5.0mA

I_C= -10mA, I_B= -0.5mA

V_CE= -5.0V, I_C= -2.0mA

V_CB= -30V, I_E= 0

V_CB= -30V, T_j= 150°C

V_EB= -5.0V, I_C= 0

V_CE= -5.0V, I_C= -10mA,

f = 100MHz

—

-100

-400

Collector-Emitter Saturation Voltage

(Note 3)

—

V_CE(SAT)

Base-Emitter Saturation Voltage

Base-Emitter Voltage

(Note 3)

—

-580

-700

-665

—

-750

V_BE(SAT)

V_BE

I_CBO

I_EBO

—

-15

-4.0

µA

Collector Cutoff Current

Emitter Cutoff Current

Gain Bandwidth Product

—

-100

100

—

MHz

f_T

Collector-Base Capacitance

Emitter-Base Capacitance

—

C_CBO

C_EBO

V_CB= -10V, f = 1.0MHz

V_EB= -0.5V, f = 1.0MHz

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

3. Short duration pulse test used to minimize self-heating effect.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30373 Rev. 6 - 2

1 of 3

BC857BS

www.diodes.com

12 3

中文翻译

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与BC857BS_1相关器件

型号	品牌	获取价格	描述	数据表
BC857BS-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, ULTRA S
BC857BS-13-F	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, GREEN,
BC857BS62Z	TI	获取价格	500mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
BC857BS-7	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, ULTRA S
BC857BS-7-F	DIODES	获取价格	DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BC857BS-AU	PANJIT	获取价格	SOT-363
BC857BSHE3	MCC	获取价格	Tape: 3K/Reel , 120K/Ctn;
BC857BSH-Q	NEXPERIA	获取价格	45 V, 100 mA PNP/PNP general-purpose double transistorProduction
BC857BSQ	DIODES	获取价格	Dual PNP, 45V, 0.1A, SOT363
BC857BSQ	YANGJIE	获取价格	SOT-363

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