Datasheet > BC857BS

BC857BS

更新时间： 2024-09-14 11:13:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	231K
描述
PNP general purpose double transistorProduction

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BC857BS 数据手册

BC857BS

PNP general purpose double transistor

1 July 2022

Product data sheet

1. General description

PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device

(SMD) plastic package. NPN complement: BC847BS.

2. Features and benefits

•

Low collector capacitance

•

Low collector-emitter saturation voltage

Closely matched current gain

Reduces number of components and boardspace

No mutual interference between the transistors

3. Applications

•

General purpose switching and amplification.

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

-45

I_C

collector current

DC current gain

-100

450

h_FE

V_CE= -5 V; I_C= -2 mA; T_amb= 25 °C

200

12 3 4 5 6 7...12

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BC857BS-13-F	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, GREEN,
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BC857BS-7	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, ULTRA S
BC857BS-7-F	DIODES	获取价格	DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR